Abstract
High vacuum electron-beam co-evaporation, followed by N2 annealing at 500 °C is used for preparing of silicon nanocrystals (Si NCs) embedded in Al2O3 dielectric matrix. X-ray diffraction and transmission electron microscopy are used to investigate the structures of Si+Al2O3 films and estimate the mean diameter of the Si NCs. The electrical properties of the diode containing Si NCs embedded in Al2O3 are studied at room temperature and resonant tunneling effect with large voltage gap is observed. A circuit model based on resonant tunneling is proposed to simulate the measured I–V curve.
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