Abstract
We prepare a symmetrical double barrier structure of Mo/AlN/Mo/AlN/Mo by using the reactive magnetron sputtering on a sapphire substrate and examine its resonant tunneling effect. Characterizations of multilayers demonstrate that the AlN (0002) aligns well along the Mo (110). Direct current-voltage (DC I–V) test finds significant negative differential resistance at room temperature around 0.7 and 0.9 V carrier energy and with peak-to-valley current ratios of about 1.1 and 1.2. The simulation using conventional transfer matrix method suggests good consistence between the designed structure, the quantized energy level and the switching voltage. The large signal DC model also fits the experimental I–V properties. Our work provides a new type of resonant tunneling device in room temperature.
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