Abstract
The interband resonant tunneling in heterostructures is investigated using transfer Hamiltonian method and the semiclassical approximation. The interband tunnel matrix element, quasi-bound state energy and tunneling times in the resonant tunneling structures (RTS) under external bias are calculated. The non-equilibrium occupation of quasi-bound states and the conditions for subband population inversion in the quantum well are obtained. The results are applied to InAs/AlSb/InAs RTS with type II heterojunctions.
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