Abstract
The interband resonant tunneling in heterostructures is investigated using transfer Hamiltonian method and the semiclassical approximation. The interband tunnel matrix element, quasi-bound state energy and tunneling times in the resonant tunneling structures (RTS) under external bias are calculated. The non-equilibrium occupation of quasi-bound states and the conditions for subband population inversion in the quantum well are obtained. The results are applied to InAs/AlSb/InAs RTS with type II heterojunctions.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call