Abstract
Experimental observation of resonant tunneling in a strained-layer double-barrier, single-well GaAs 1−xP x-GaAs (x ≈ 0.3) quantum-well heterostructure (QWH) is reported. Tunneling via quasi-two-dimensional states in the center GaAs quantum well is confirmed by anisotropy of the d 2I dV 2 characteristic in a strong perpendicular magnetic field (B∥) as compared to a parallel field (BB⊃. Transmission electron microscopy is used to show the effect of dislocations in introducing asymmetry in the tunneling I-V characteristics.
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