Resonant Raman Scattering near the Band Gap in 4H‐PbI2, Crystals)

Abstract

AbstractNew data are given of the resonatn Raman scattering (achieved by incident excitation tuning or by sample temperature variation) fo rthe 4H polytype of pure and doped PbI2 single crystals. A new Raman line, considered by us as a two‐TA‐phonon line, is observed at 30 cm−1. Some new features of the Raman spectra in the region of 75 cm−1 are revealed for pure and doped crystals, when excitation approaches resoncance. As for the two‐LO‐phonon line (224 cm−1) the same enhancement at resonance is found for a new line apperaing at 126 cm−1.