Abstract
We have studied the electric field dependence of the photocurrent and of the excitonic photoluminescence (PL) associated with the first and second conduction subbands in weakly coupled GaAs/AlAs quantum wells. Resonant subband alignment between adjacent QWs results in a quenching of the PL intensity from the first subband, an enhancement of the PL from the second subband, and a maximum of the photocurrent. These resonant extrema are observed at slightly different electric fields. We show that this behavior arises from the different binding energies of intra- and inter-well excitons.
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