Resonant laser excitation and electron-hole kinetics of a semiconductor: I. Nonequilibrium Green's function treatment and fundamental equations

Abstract

The nonequilibrium Green's function technique is applied to the electron-hole plasma in a semiconductor resonantly excited in the interband absorption region by a monochromatic laser. In contrast to earlier investigations the transverse electron-photon interband coupling is explicitly considered and the dynamical Stark effect between bands reflected by the appearance of additional laser induced gaps is taken into account. Starting from a unique quantum-mechanical description, a set of equations is given governing the spectrum and kinetics of electrons, holes, photons and plasmons (phonons) as well as the propagation of the Maxwell field. By a straightforward approximation for the self-energies and polarizations the system of equations beomes closed in the framework of a one-particle/mean-field description. However, the description is renormalized enough to describe many-particle effects as well as the nonlinear field behaviour in an arbitrary nonequilibrium situation.