Abstract
Periodic structure is observed in the current-voltage characteristics at 4.2 K of n−GaAs-AlxGa1−xAs-n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa1−xAs thicknesses of 30–35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler–Nordheim tunneling.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
