Abstract
Sequential resonant tunneling is proposed to enhance the photocurrent and reduce recombination losses in photovoltaic devices based on multiple-quantum-well (MQW) heterostructures. An InGaAsP/InP MQW p–i–n diode with built-in sequential resonant tunneling has been fabricated, and demonstrates an increase in the photocurrent and reduction in photoluminescence intensity. These effects are attributed to the resonance tunneling effect.
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