Abstract
Abstract The features of electron exchange between secondary excited Si ions and the (111) Si surface are studied experimentally and theoretically. An oscillating character of the Si+* energy spectrum due to the charge-exchange process has been found in the case when the energy of the excited state of the ion is located near the maximum in the density of the surface electron states. The oscillations found experimentally have been shown to be explainable if the electron exchange inside a solid occurs prior to ion transition through the surface.
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