Abstract
The current-voltage characteristics of a series of double barrier structures based on n-GaAs/(AlGa)As are studied using a quantising magnetic field perpendicular to the barriers to investigate the off-resonant current. Landau level structure arising from elastic scattering and LO phonon-assisted tunnelling via the quantum well state is clearly identified. For well widths less than 6 nm, emission processes involving both the AlAs- and GaAs-like LO phonon modes of the (AlGa)As barrier are observed.
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