Abstract

We have measured the Raman resonance profiles and the k | dispersion of in-plane low energy excitations in a GaAs/Al 0.3Ga 0.7As modulation doped superlattice. We find linear dispersion as a function of k | for the spin-flip intraband single particle processes and for two modes appearing for parallel polarisation of incident and emerging beams. The Raman resonance profiles show fine structure interpreted to be due to the hole subbands.

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