Abstract
We have studied room-temperature, nonradiative resonant energy transfer from InGaN/GaN quantum wells to CdSe/ZnS nanocrystals separated by aluminum oxide layers of different thicknesses. Nonradiative energy transfer from the quantum wells to the nanocrystals at separation distances of up to approximately 10 nm was observed. By comparing the carrier dynamics of the quantum wells and the nanocrystals, we found that nonradiative recombination via surface states, generated during dry etching of the wafer, counteracts the nonradiative energy-transfer process to the nanocrystals and therefore decreases the process efficiency.
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