Abstract
Moir\'e excitons in twisted heterobilayer (HBL) transition metal dichalcogenides (TMDs) exhibit an interesting platform for engineering optical properties. The screening from the dielectric environment surrounding the HBL and the twist angle, arising from vertically stacking two layered TMD materials, allow the possibility to control and tune the interlayer exciton states. In this paper, we show in the first part that interlayer excitons in $\mathrm{Mo}{\mathrm{Se}}_{2}/\mathrm{W}{\mathrm{Se}}_{2}$ HBL localize due to the moir\'e potential arising within the $\text{TMD} \text{HBL}$ and discuss the conditions for which each localization site can be viewed as a local quantum emitter. In the second part, we show that the trapped exciton energy can be transferred, via the F\"orster resonance energy transfer (FRET) mechanism, to an adjacent two-dimensional sheet of doped graphene (Gr). The analysis of the localized exciton quenching rate is provided within the random-phase approximation, which allows one to access the collective electronic behavior within the Gr layer. Our model demonstrates the high sensitivity of FRET efficiency to external parameters, particularly the dielectric environment and the distance between the donor---here the HBL---and the acceptor (Gr). These properties show that FRET can be quite a useful tool for applications in biological systems and nanoscale sensors.
Published Version
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