Abstract
Resistance contributions in a nanowire device are determined accurately. Resistance in silver nanowires, such as conduction-channel and contact resistance, including current-crowding effects, reveal both the true nanowire resistivity and the overall device performance, including dissipation and scaling potential. A comprehensive study on the device layout, the contact geometry and, most importantly, the transfer length over which charge injection between contact electrode and nanowire occurs, is performed.
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