Abstract
The resistivities of condensed polycrystal and single-crystal aluminum films have been measured as a function of thickness (1600-36000 \AA{}) and temperature (4.2-300\ifmmode^\circ\else\textdegree\fi{}K). Both the temperature-independent residual resistivity and the temperature-dependent resistivity increase with decreasing film thickness. The residual resistivity agrees very well with the Fuchs-Sondheimer theory. Both groups of films have the same bulk electron mean free path but different reflection parameters. The increase in the temperature-dependent part of the resistivity is larger but similar to the deviations predicted by the Fuchs-Sondheimer theory.
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