Abstract
The effect of annealing in air and oxygen on structural, electrical and optical properties of gallium doped ZnO thin films was investigated. The X-ray diffraction patterns showed that the films were highly preferentially oriented along (002) plane. After the heat treatment in air and oxygen environments, the intensity of (002) peak was apparently improved. It was found that heat treatment in air atmospheres lead to increase in surface roughness of the film. The GZO films annealed in oxygen at 673 K exhibited low resistivity of 4.21 × 10–3 Ω.cm, while the resistivity of film annealed in air showed a slightly higher value of 7.14 × 10–3 Ω.cm. In addition to this, all films have good optical transmittance about 80% in the visible region. It is found from the photoluminescence studies that the broad visible emissions in GZO films originated from the intrinsic shallow traps (VZn) and deep level vacancies (ZZi, OZn and Vo)
Highlights
In recent years, zinc oxide (ZnO) films have been extensively studied due to its promising nature of replacing GaN in the blue and ultraviolet optoelectronic applications such as UV lasers, blue to UV light emitting diodes and UV detectors [1,2,3]
We illustrate the results of our investigations on the influence of air and oxygen atmosphere annealing on the structural, electrical and optical properties of Ga doped ZnO (GZO) films prepared by spray pyrolysis
The diffractogram (Figure 1) of the gallium doped zinc oxide (GZO) thin films annealed in different atmospheres shows that all the X-ray diffraction measurements (XRD) patterns have prominent peak corresponding to ZnO (002) orientation
Summary
ZnO films have been extensively studied due to its promising nature of replacing GaN in the blue and ultraviolet optoelectronic applications such as UV lasers, blue to UV light emitting diodes and UV detectors [1,2,3]. When compared to GaN and ZnSe, ZnO films can be deposited at a lower temperature, which is preferable for realizing integration of ZnO based optoelectronic devices using silicon-based microelectronic process. Doping is the most relevant issue for the design and realization of ZnO-based devices This issue in particular, is important for the applications of ZnO as TCO. Recent studies have reported the use of ZnO as an air stable anode in an OLED, providing an additional evidence of GZO as a promising TCO for organic device applications [15]. We illustrate the results of our investigations on the influence of air and oxygen atmosphere annealing on the structural, electrical and optical properties of Ga doped ZnO (GZO) films prepared by spray pyrolysis. Comparisons of the stability of the electrical resistivity of GZO films are analyzed after heat treatment in air and oxygen
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