Abstract
Thin films of V2O3 with thickness of 215nm were grown on a- and c-plane sapphire by pulsed laser deposition with (001)V2O3∥(001)Al2O3 and (110)V2O3∥(110)Al2O3 epitaxy. The effects of the growth direction on the electrical resistivity of the films were examined. Films on c-plane sapphire displayed a metal-to-insulator transition at T=180K compared to T=160K in single-crystal V2O3. The films on a-plane sapphire, however, showed an insulator-to-insulator transition at T=186K. The variation in the phase transformation characteristics and the resistivity can be attributed to different levels of strain and commensurate changes in the film morphology.
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