Abstract

The electrical resistivity of copper single crystals oriented for single glide and cyclically strained at liquid helium temperature has been measured. Annealing experiments allow separation between the contribution from dislocations and point defects and the total resistivity increment. The measurement of resistivity within a cycle reveals the development of reversibility with continued cycling. It indicates simultaneous defect production and annihilation within a cycle. Intermediate annealing reduces the excess point defect concentration and results in a drastic increment in the production rate of point defects. The mechanisms of dislocation and point defect production and annihilation are considered and the implications for the formation of extrusions and intrusions are discussed.

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