Abstract
The extent of small‐scale radial resistivity inhomogeneity in several n‐type silicon crystals has been quantitatively determined with high spatial resolution by the spreading resistance resistivity measurement technique. Typical results for Czochralski, float‐zone refined, crucible‐less, web‐grown and vapor‐deposited epitaxial silicon are given, showing that appreciable nonuniformity in local resistivity exists in many crystals. The usefulness of the spreading resistance technique in rapid evaluation of the degree of resistivity inhomogeneity of individual silicon samples is illustrated.
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