Abstract
Nickel monosilicide (NiSi) has been well recognized as a promising silicide for future ULSI devices. It can have low resistivity of 15 μΩ cm on deep submicron lines and after high temperature (>600°C) annealing. This work studies the resistivity and thermal stability of thin NiSi layer on B, As, P-doped and in situ boron doped deep submicron polycrystalline silicon (poly-Si) lines after 500–800°C/1 h of annealing. The stability of NiSi on crystalline silicon (c-Si), poly-Si and amorphous silicon (a-Si) film will also be studied.
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