Abstract
The resistivity and barrier height of the nano-resistor made from the Zr-doped HfO2 MOS capacitor has been investigated. Bumps corresponding to nano-resistors formed from the dielectric breakdown were observed from SEM micrographs. The resistivity and barrier height to Si of the nano-resistor were estimated based on assumptions of the uniform size and negligible contact resistance to the ITO gate electrode. I-V curves of the nano-resistor device were used to estimate the resistivity of the single nano-resistor, i.e., about 103 Ω∙cm in the high gate voltage rage, and the barrier height, i.e., 0.66 V in the low voltage range. Judged from the barrier height value, the nano-resistor was fully established after the device was stressed at -20V for 1 min. These basic electrical properties are critical for practical applications of nano-resistor based devices.
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