Resistive-open defect injection in SRAM core-cell

Abstract

Resistive-open defects appear more and more frequently in VDSM technologies. In this paper we present a study concerning resistive-open defects in the core-cell of SRAM memories. The first target of this work is a comparison of the effect produced by resistive-open defects in the 0.13 /spl mu/m and 90 nm core-cell. We show that the 90 nm core-cell is more robust than the 0.13/spl mu/ m core-cell in presence of resistive-open defects. On the other hand we show that dynamic faults are most likely to occur in the 90 nm than in 0.13 /spl mu/m core-cell. Finally we propose a unique March test solution that ensures the complete coverage of all the extracted fault models for both technologies.