Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

Abstract

In this paper, the resistive switching behavior of a single-component-polymer resistive memory device based on polychloro-para-xylylene (parylene-C) is comprehensively studied. With the excellent chemical stability and high process compatibility of parylene-C, an 8 × 8 crossbar array with a sandwiched structure of parylene-C and active electrodes is fabricated, which can be integrated in the CMOS back-end process and shows great potentials for future transparent, low-cost, flexible, and high-density nonvolatile memory applications. This organic memory device exhibits excellent performance with a 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> ON/OFF current ratio, nanosecond set/reset speed, and low switching voltages, as well as good retention and cycling endurance behaviors. The switching mechanism is systematically investigated with the comparison between active electrodes (Al, Cu, or Ag) and an inert electrode (Pt), as well as the dependence on temperature and device area.