Flexible Single-Component-Polymer Resistive Memory for Ultrafast and Highly Compatible Nonvolatile Memory Applications

Abstract

A novel flexible polymer resistive memory device based on single-component polymer polychloro-para-xylylene (parylene-C) sandwiched between Al or Cu top electrode and W bottom electrode is presented in this letter. With 4 × 4 crossbar array, the polymer memory device is fabricated by standard photolithograph technology, due to the chemical stability and the immunity of parylene-C to the chemicals and solvents in lithographic process. The device exhibits a good memory margin of more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> on/off current ratio, as well as ultrafast programming/erasing speed (<;15 ns). Moreover, a good retention time of more than 2.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> s and a cycling endurance of more than 130 program-read-erase-read cycles are obtained in this polymer memory device. The successfully demonstrated performance of this polymer memory shows great potential for transparent, flexible, and high-density memory applications and hybrid integration with CMOS back-end process.