Abstract
The authors have prepared μm-sized HfO2-based nonplanar resistive switching cells with TiN and Pt electrodes. The structures exhibited stable resistive switching loops with low resistance state current below 1 mA. The influence of series resistance of the TiN strip electrode on the switching characteristics was measured and simulated. It was shown that the series resistance reduces the low state resistance current as well as high to low resistance state ratio.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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