Abstract
Bipolar resistive switching phenomena have been observed in TiN/AAO/TiN structures. Porous anodic aluminium oxide (AAO) membranes with pore diameters ranging from 15 to 50 nm were prepared by two step anodization in oxalic acid under specific reaction condition on TiN layer. The nanochannel arrays of AAO membranes were characterized with field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). AAO membrane was sandwiched between two conducting TiN layers to fabricate MIM structures. Good stability in resistive switching behaviour up to several cycles and a ~ 2x resistance ratio has been achieved.
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