Resistive Switching in Ag2Te Semiconductor Modulated by Ag+‐Ion Diffusion and Phase Transition

Abstract

AbstractMemristors are considered to be the fourth circuit element and have great potential in areas like logic operations, information storage, and neuromorphic computing. The functional material in a memristor, which has a nonlinear resistance, is the key component to be developed. Herein, resistive switching is demonstrated and the structural evolutions in Ag2Te are examined under an external electric field. It is shown that the electroresistance effect is originating from an electronically triggered phase transition together with directional Ag+‐ion diffusion. Using in situ transmission electron microscopy, the phase transition from the monoclinic α‐Ag2Te into the face‐centered cubic b‐Ag2Te, accompanied by a change in resistance, is directly observed. Diffusion of Ag+‐ions modulates the localized density of Ag+‐ion vacancies, leading to a change in electrical conductivity and influences the threshold voltage to trigger the phase transition. During the electric field‐driven phase transition, the spontaneous and localized multiple polarizations from the low‐symmetry α‐Ag2Te (referring to an antiferroelectric structure) are vanishing in the cubic b‐Ag2Te (referring to a paraelectric structure). The abrupt resistance change of thin Ag2Te caused by the phase transition and modulated by the applied electric field demonstrates its great potential as functional material in volatile memory and memristors with a low‐energy consumption.