Abstract
To solve the problem of information storage and explore a new generation of memory, Au/Bi2Ti2O7/NiO/ITO (Indium tin oxide semiconductor) resistive variable memory is fabricated and its resistive switching characteristics are studied. The device has diode-like rectifier characteristics and shows good durability and stability under 100 cycles of read−and−write tests. At the reading voltage of 0.44 V, the resistive switching ratio of the device reaches 102. Combining the O 1 s spectrum of XPS and further analyzing the I − V double logarithmic curve, it is found that the conduction mechanism of the device is mainly related to the ohmic conduction mechanism and the space charge limiting current mechanism, and its resistive switching behavior is related to the migration of oxygen vacancies to change the interface barrier.
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