Abstract
Calcium copper titanate (CCTO) thin films were deposited on p-Si (100) substrates by RF magnetron sputtering technique. In order to improve the crystalline properties and to promote the phase formation, post-deposition annealing has been carried out by 3 different type of technique namely; conventional, rapid thermal and sequential annealing. All films have shown the evolution of CCTO peak in XRD pattern confirming the phase formation at 950 °C. Conventionally annealed films have shown better crystalline properties with lower FWHM. Al/CCTO/Si metal oxide semiconductor (MOS)structures were fabricated for electrical measurements. All films have shown bipolar resistive switching behavior with the sweep of bias voltage. Conventionally annealed film has shown good on/off ratio of 826 as compared to other samples. Double logarithmic plots of current-voltage behavior have depicted space charge limited conduction in all the films.
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