Abstract
Resistive switching memory with good performance can be possibly used in next-generation nonvolatile memory and flexible electronics. In the previous studies, some of the flexible resistive switching layers were organic materials. In this paper, an inorganic Al/Al 2 O 3 /ZrO 2 /Al flexible resistive switching memory fabricated at room temperature is proposed for the first time. The resistive switching can be reproduced for over 100 times with stable resistive switching characteristics. In addition, a possible resistive switching filamentary model of the flexible device is demonstrated in this paper. The flexibility and nonvolatility of the flexible device are also demonstrated. Based on the experimental results, the proposed Al/Al 2 O 3 /ZrO 2 /Al flexible device is possibly used in next-generation flexible electronics.
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