Abstract
Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO3 junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices.
Highlights
Oxide-based resistive switching devices are promising candidates for new memory and computing technologies
The results demonstrate that resistive switching is controlled by an interfacial layer, as revealed by a parasitic interfacial capacitance, an increased ideality factor of the Schottky barrier and an extended depletion width within the SrTiO3
We show that the contribution of such unintentional layers to the resistive switching process can be minimized by appropriate processing, providing a pathway towards engineering more reliable resistive switching devices
Summary
Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. We show that appropriate interface processing can eliminate this contribution These findings are an important step towards engineering more reliable resistive switching devices. One extensively studied type of resistive switching device consists of a Schottky junction between a doped, wide-band gap oxide, such as SrTiO3, and high work-function metals such as Pt, Au or metallic oxides such as SrRuO3 and YBa2Cu3O7 À x6–9. In such devices, resistive switching is accompanied by a modulation of the effective Schottky barrier height[7,8,10,11,12]. We show that the contribution of such unintentional layers to the resistive switching process can be minimized by appropriate processing, providing a pathway towards engineering more reliable resistive switching devices
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