Abstract
Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal–oxide–semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercialization applications. Owing to the filamentary nature of most RS devices, the variability of RS parameters can be reduced by doping in the RS region, where conductive filaments (CFs) can grow along the locations of impurities. In this work, we have successfully obtained RS characteristics in Pt dispersed silicon oxide-based memristors. The RS variabilities and mechanisms have been analyzed by screening the statistical data into different resistance ranges, and the distributions are shown to be compatible with a Weibull distribution. Additionally, a quantum points contact (QPC) model has been validated to account for the conductive mechanism and further sheds light on the evolution of the CFs during RS processes.
Highlights
Memristors are nonvolatile resistance switching (RS) devices which can keep their internal resistance depending on the applied voltage and current status [1–6]
The variability of RS parameters is a major challenge for the progression of silicon oxide-based memristors from research to application
A quantum point contact model has been validated to account for the conductive mechanism and further shed light on the evolution of the conductive filaments (CFs) during RS processes
Summary
Memristors are nonvolatile resistance switching (RS) devices which can keep their internal resistance depending on the applied voltage and current status [1–6]. Among numerous RS materials, silicon oxide-based memristors have been intensively investigated, owing to their compatibility with the dominant silicon complementary metal–oxide–semiconductor (CMOS) fabrication technology [25–35]. The variability of RS parameters is a major challenge for the progression of silicon oxide-based memristors from research to application. We fabricated Pt dispersed silicon oxide-based memristors and successfully obtained their RS characteristics. The studied Pt/Pt:SiOx/Ta memristors (the inset of Figure 1a) were fabricated on a Si wafer. Metallic Ta and Pt layers were deposited by DC sputter deposition at ambient temperature. The RS layers of the Pt:SiOx films were deposited by radiofrequency (RF) magnetron co-sputtering in pure. Ar, using SiO2 and Pt targets as dielectric and metal sources, respectively. SiO2 thin films were of about 20–45 atomic%, which were controlled by the RF power of the Pt sputtering target [36,37]. The sandwich structure of the Pt/Pt:SiOx/Ta memristors consisted of (from bottom to top) a
Sign-in/Register to view highlights & summary 
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call