Abstract
We fabricated a ReRAM device which has a HfOx dielectric layer sandwiched with two ferromagnetic electrodes of Ni and FeNi. The device shows bipolar resistance switching characteristics such that SET operation occurs when positive bias is applied to Ni electrode. Fluctuation of switching voltages of the device was smaller than that of the Ni/HfOx/Pt device. We observed anisotropic magnetoresistance phenomenon in the LRS (low resistance state). There were step-like resistance changes in MR property, which may corresponded to formation and annihilation of domain in the ferromagnetic conductive filament.
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