Abstract
The authors report on the fabrication and elec- tronic transport property of LaAlO3/Nb-doped SrTiO3 het- erostructure. The current-voltage curves of this heterostruc- ture show hysteresis and a remarkable resistance switch- ing behavior, which increase dramatically with decreasing temperature. Multiresistance states were realized by voltage pulses with different amplitudes and polarities and the ra- tio of the electrical pulse induced resistance change is larger than 10 4 . More interestingly, the relaxation of junction cur- rent after switching follows the Curie-von Schweidler law J ∝ t −n with an exponential increase of n with temperature. The results were discussed in terms of the trap-controlled space charge limited conduction process via defects near the interface of the heterostructure.
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