Abstract
Flexible resistance random access memory (RRAM) consisting of titanium oxide was investigated in this study. The TiO2 thin film was sputtered on a flexible substrate at room temperature. The fabricated (Cu/TiO2/Cu) device on polyethersulfone (PES) showed stable unipolar resistive switching behaviors with an on/off ratio of ~100 at 0.2V. Because of the good ductility of electrode, the performance of resistive switching was not degraded by different substrate bending, and the resistive switching characteristic was still remained after being physically flexed more than 100 times, even when the substrate is bent up to 10 mm radius. The good performance of the device indicates that TiO2 thin film has high potential for flexible RRAM applications.
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