Abstract
The resistance switching behavior in sputtered Ti/ZrO2/Pt sandwiched structure was investigated for nonvolatile memory application. Multiple current-voltage measurements reveal highly uniform distribution of the conduction current and switching voltage. This bipolar resistive switching driven by bias of proper magnitude and polarity is interpreted by filament model. The reset threshold increases with the compliance setting imposed on the turn-on transition, while the switching currents in high and low resistance states are not varied for different top-electrode areas. Both characteristics are ascribed to the electro-chemical reactions of field-induced reduction-oxidation processes.
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