Abstract
The resistance switching behaviors of SiO2, HfO2, and TiO2 are investigated to elucidate their universal physical origins. It is demonstrated that a multideposition film fabrication process consisting of repeated thin film deposition and low-temperature annealing in O2 ambient leads to superior resistance switching behaviors, such as forming-free switching characteristics, low switching voltage, and high resistance ratio of low- and high-resistance states compared with the conventional sputtered TiO2 film. From the resistance switching characteristics of binary metal oxide films, it is also observed that the device operation parameters, including reset/set voltages and resistance ratio, are related to the dielectric constants of the oxides.
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