Abstract
Bi0.89Ho0.08Sr0.03Fe0.97−xMn0.03Zn x O3 (BHSFMZn x O) thin films were prepared by a chemical solution deposition method on the fluorine doped tin oxide (FTO) substrates. The effects of Sr, Ho, Mn and Zn co-doping on the crystal structure, defects, leakage current, resistance switching behavior and ferroelectric properties of the BiFeO3 films were investigated. The results show that Zn2+ doped BHSFMO films lead to the transformation of the preferred orientation from (110) to (100). The oxygen vacancies, $${(Zn{\prime _{Fe}} - V_{O}^{{ \cdot \cdot }})^ \cdot },$$ leakage current density and the Schottky barrier of BHSFMZn x O films were increased with the increase of Zn2+ doping. The BHSFMZn0.04O film shows the highest resistance switching ratio (18.6) at 200 kV/cm. The BHSFMZn0.01O film have larger remanent polarization and switching current (P r ~ 135 µC/cm2 and I S ~ 1.5 mA), and the relatively low coercive field and the polarization leakage current (E c ~ 350 kV/cm and I L ~ 0.14 mA). Therefore, the resistance switching behavior or ferroelectric properties can be obtained by controlling the doping amount of Zn2+.
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