Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis

doi:10.18494/sam.2018.1809

Abstract

Highlights

Zinc oxide (ZnO), a group II–VI semiconductor with high melting temperature,(1) wide bandgap,(2) and large exciton binding energy,(3) has attracted much attention in the past decade
We report the electrical properties of the p-Si/n-ZnO:Er heterojunction diode with different Er contents by spray pyrolysis
The properties of p-Si/ZnO:Er/ZnO:In diodes with various Er doping contents prepared by spray pyrolysis were studied

Summary

Introduction

Zinc oxide (ZnO), a group II–VI semiconductor with high melting temperature,(1) wide bandgap,(2) and large exciton binding energy,(3) has attracted much attention in the past decade. Many ZnO-based devices have been investigated.[4,5,6,7,8,9] In the device structure, the doping in the film is an important issue in the material and device performance. In the fabrication of ZnO thin film, many deposition methods such as molecular beam epitaxy,(20) chemical vapor deposition,(21) sputtering,(22) sol–gel,(23) and spray pyrolysis[24] have been developed. We report the electrical properties of the p-Si/n-ZnO:Er heterojunction diode with different Er contents by spray pyrolysis. The effects of Er doping, diode resistance, ideality factor, and electroluminescence properties were discussed

Experimental Details

Results and Discussion

Conclusions