Abstract
Reproducible resistance switching behaviors induced by the external voltage were investigated in anodic oxide alumina (AOA) thin films. Electric-transport measurements showed that a low resistance state in the Ag/AOA/A1 structures might be caused by the formation of the conductive filaments. Switching to a high resistance state occurred due to the rupture of these filaments. Change in the photoluminescence properties of the AOA films depending on the resistance states was observed.
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