Abstract
Silicon carbide refractories with binders of silicon nitride and silicon oxynitride are compared with dense aluminum silicate refractories. It is shown that silicon carbide refractories possess high stability in aluminum melts and vapors of aluminum chloride, whereas aluminosilicate refractories are severely damaged under these conditions. Silicon carbide refractories with a binder of silicon nitride possess the highest resistance to the effect of the tested aggressive factors and are recommended for operation in aluminum melts and gaseous aluminum chloride media.
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