Abstract
We have studied current-voltage (I-V) characteristics of metal-on-tube metal-multiwall carbon nanotube-metal structures as a function of gate voltage. Device resistances ranged from about 10 kΩ to several MΩ, depending on the electrode metal and its deposition condition. When the resistance was much higher than the quantum resistance (RQ = h/4e2 ≈ 6.5 kΩ), samples showed clear Coulomb blockade. We find that the tunnel barrier is located in the interface between the MWNT and the metal electrode. As the resistance decreased, the Coulomb oscillations became irregular with respect to the gate voltage, but the high resistance region around V=0 and its dependence on gate voltage survived at resistance smaller than 10 kΩ
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
