Resistance and tunneling spectra of aligned multiwalled carbon nanotube arrays

Abstract

The resistance and tunneling spectra of samples formed by depositing silver electrodes at the two ends of aligned, template-grown, carbon nanotube arrays were measured in the temperature range 0.67–440 K. Two types of samples were fabricated, one with small oxide tunnel junctions separating the carbon nanotubes from the metal electrodes, the other with a significant Al2O3 tunnel barrier. The measurements indicate the presence of three regimes for dI/dV(V). For T>220 K, dI/dV(V) and the zero-bias conductivity show a broad minimum and an activation temperature dependence suggesting semiconductor behavior. In the temperature range 10<T<140 K, the zero-bias conductivity shows a square-root temperature dependence. For T<2 K, a very steep rise in the zero-bias tunneling resistance is observed with a strong simultaneous suppression of the tunneling conductivity near the Fermi energy. Coulomb blockade is suggested as a plausible explanation of the observed behavior.