Abstract
Resistance profiles along as-grown GaAs nanowires were measured with a multi-tip scanning tunneling microscope used as a nanoprober. The nanowires were grown in the vapor-liquid-solid growth mode in a two-temperature-step mode and doped with Zn. Using a transport model, the resistance profile was converted to a dopant profile. The dopant distribution along the nanowires was found to correlate with the temperature during different phases of nanowire growth. The nanowire base grown at higher temperature exhibits a decreased dopant concentration. Mechanical stress by intentional bending of a nanowire was shown not to influence nanowire conductance.
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