Abstract
The room temperature residual stress of 4H-SiC wafers has been investigated using a precise X-ray diffraction method. A large strain was observed for the circumferential direction of wafers, more than ten times larger than those measured along the principal plane direction and the radial direction. Optimizing the lateral temperature distribution in growing crystals leads to reduction of residual stress of wafers with high crystal quality.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.