Abstract
High-quality CuInS_2 (CIS) crystals were grown by the flux method using a chloride flux. CIS is generally used in absorption layers of thin-film photovoltaic cell due to their high energy conversion efficiency and high absorption coefficient. High-quality CIS crystals with low defect density and thermal strain are expected to high photon-to-current conversion efficiency. Flux growth is one of the preferred methods because the crystal can grow in an unconstrained fashion and therefore develop facets, resulting in high quality crystals. In this study, high-quality CIS crystals were successfully grown from the chloride flux. The morphology of the synthesized crystals was dependent on the growth conditions such as the holding temperature.
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