Abstract

This work seeks to characterize residual stress and microstructure of platinum thin film in Au/Pt/Ti/p-GaAs ohmic contact. Platinum thin films are deposited on p-GaAs (100) wafer and SiO2 via patterned area on it by a RF sputtering deposition system while different deposition powers are considered. Evolution of residual stress, roughness and grain size of the films by changing the deposition power are studied. The residual stress is measured by substrate curvature method, and the microstructure of the films is considered by SEM and AFM analysis. AFM analyze shows that Pt layer roughness dramatically increases from 2.2nm to 8.7nm on SiO2 substrate and from 1.05nm to 5nm on GaAs substrate when power increases from 150W to 300W. Also SEM images show that grain size increases on either GaAs or SiO2 substrates and step coverage deteriorates by increasing the deposition power. Pt layer stress measurement shows that there is a minimum and suitable point at 200W for GaAs substrate. Also it is observed that the platinum stress changes from tensile to compressive for SiO2 substrate when RF deposition power increases from 200W to 250W.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.