Abstract
We investigated the residual defects in low-dose (1013cm−2) arsenic implanted Si after high-temperature (1100°C) annealing. The presence of residual damage was successfully revealed after using a rapid thermal process for heat treatment. This damage was identified as vacancy-type defects distributed near the surface, such as tetravacancies or pentavacancies. When O2 gas was introduced to the annealing chamber, vacancy-type defects were transformed into divacancy and carbon–oxygen complex. They were confirmed to be created by a non-equilibrium reaction during the rapid cooling-down step in the annealing sequence.
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