Abstract
Abstract Results are presented of an investigation of the residual defect structure after high-temperature (>1000°C) annealing (HTA) of implanted layers in silicon. The most typical defects after HTA are dislocation loops (DL) and a misfit dislocation network (MDN). The effect of the irradiation and annealing conditions on the defect formation are presented. The important role of point defects in MDN formation is discovered. A possible role of these defects in changing electrophysical properties of the implanted layers is discussed.
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